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0A120 AQV210S 1N3697B K2750 SBR8215 SMB20 1AL048T 200129FS
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  Datasheet File OCR Text:
 MXTA42
NPN Plastic-Encapsulate Transistor
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
M aximum R atings ( TA=25 C unless otherwise noted)
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Value 300 300 5.0 500 Unit Vdc Vdc Vdc mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board (Note 1.)TA=25 C Derate above 25 C Thermal Resistance, Junction to Ambient (1) Junction and Storage, Temperature Range
Symbol PD R JA TJ,Tstg
Max 500 4.0 250 -55 to +150
Unit mW mW/ C C/W C
Device Marking
MXTA42=A42
Characteristics Collector-Emitter Breakdown Voltage (IC= 1.0 mAdc, IB=0) Collector-Base Breakdown Voltage (IC= 100 Adc, IE=0) Emitter-Base Breakdown Voltage (IE= 100 Adc, IC=0) Collector Cutoff Current (VCB= 200 Vdc, IE=0) Emitter Cutoff Current (VEB= 5.0 Vdc, IC =0) 1.FR-5=1.0 x 0.75 x 0.062 in.
Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO
Min 300 300 5.0 -
Max 0.25 0.1
Unit Vdc Vdc Vdc uAdc uAdc
WE ITR O N
http://www.weitron.com.tw
MXTA42
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain (IC= 1 mAdc, VCE=10 Vdc) (IC= 10 mAdc, VCE=10 Vdc) (IC=30 mAdc, VCE=10 Vdc) Collector-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2 mAdc) Base-Emitter Saturation Voltage (IC= 20 mAdc, IB= 2 mAdc) Transition Frequency (VCE =20 Vdc, IC =10 mAdc, f=30MHz) hFE (1) hFE (2) hFE (3) VCE(sat) VBE(sat) fT 60 80 75 50 250 0.2 0.9 -
Vdc Vdc
MHz
Classification of hFE(2) Rank Range A 80-100 B1 100-150 B2 150-200 C 200-250
WEITRON
http://www.weitron.com.tw
MXTA42
Typical Characteristics
120
hFE, DC CURRENT GAIN
WE IT R ON
100 80 60 40
Tj=+125 C
25 C
-55 C 20 0
0.1
1.0 I C , COLLECTOR CURRENT (mA)
10
100
FIG. 1 DC Current Gain
1.4 1.2
V, VOLTAGE (VOLTS)
VCE(sat)@25 C, ICIB = 10 VCE(sat)@125 C, ICIB =10 VCE(sat)@ -55 C, ICIB=10 VBE(sat)@25 C, ICIB = 10 VBE(sat)@125 C, ICIB =10 VBE(sat)@ -55 C, ICIB =10 VBE(on)@25 C, VCE = 10V VBE(on)@125 C, VCE = 10V VBE(on)@-55 C, VCE = 10V
0.1 1.0 10 100
1.0 0.8 0.6 0.4 0.2 00 IC, COLLECTOR CURRENT (mA)
FIG.2 "On"Voltages
80 f T , CURRENT-GAIN-BANDWIDTH (MHz) 70 60 50 40 30 20 10 1.0
Tj=25 C VEC=20V f=20MHz
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
FIG.3 Current-Gain-Bandwidth
WEITRON
http://www.weitron.com.tw
MXTA42
SOT-89 Outline Dimensions
WE IT R ON
unit:mm
SOT-89
E G A
J
C
H
K L
B
D
Dim A B C D E G H J K L
Min Max 1.600 1.400 0.520 0.320 0.560 0.360 0.440 0.350 4.600 4.400 1.800 1.400 2.600 2.300 4.250 3.940 1.500TYP 3.100 2.900
WEITRON
http://www.weitron.com.tw


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